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Compare Vce(on) and Vds(on) for conduction losses over a range of load current - as well as switching loss under various conditions. The key is what they are NOT talking about - the body diode characteristics of superjunction MOSFETs, which can be a huge differentiator depending on the topology. IGBT die are most commonly designed without an integral (monolithic) anti-parallel diode because they can be better optimized for particular forward parameters that way. Separate antiparallel diode die can then co-packaged for topologies that require it. This makes it easier to fully optimize the forward and reverse characteristics of the compound device. The disadvantage is that the co-packaging takes-up some extra room, and the wirebonds add a small amount of parasitic inductance. But co-packaged IGBTs like this are still the dominant devices used in motor drives and other inverter applications. One additional benefit of IGBTs is that they can be designed to survive a direct short-circuit across the bus, for several microseconds (Short Circuit SOA capability), versus Superjunction FETs do not have this capability.
Superjunction FETs on the other hand have a parasitic body diode (like all vertical FETs), whether you like it or not. The advantage of the superjunction process is that it can produce a very low ON resistance at high voltage using less silicon area than other methods. However, the big disadvantage of superjunction is that the body diode dynamic performance is poor. Even with special doping and irradiation - it might get a little better, but it is in a completely different league compared to an optimized fast diode or SiC Schottky.
So this is why you see IGBTs dominate in inverter topologies like VFDs - because you must have decent body diode dynamic performance or suffer poor efficiency, EMI problems, etc. Note that in the Infineon article you referenced - it says they are comparing "in half-bridge switching test circuit with inductive load, the diode is 8A rated SiC Schottky diode from infineon for all devices." There is no drawing of the test circuit, but I am pretty sure it is NOT a half-bridge topology (otherwise where would this Schottky go?) - it must be either a boost topology, or a clamped inductive test circuit. I am guessing boost because they then move into a comparison on a boost PFC converter.
The bottom-line is that both IGBT and Superjunction can work well in applications where the body diode does not conduct (boost PFC, 2-switch forward converter). BUT for true inverter applications (half-bridge, H-bridge, 3-phase), superjunction FETs are rarely used because of their large diode recovery charge. IGBTs are therefore the dominant switch used in inverter applications above a few hundred watts.